RF and Microwave Oscillator Design using p-HEMT Transistor
نویسندگان
چکیده
This paper presents a systematic approach to designing negative-resistance and Colpitts oscillators using p-HEMT transistor. Various models such as, common source and common gate configuration in negative-resistance oscillators, common source series feedback in Colpitts oscillator is selected to analyze the output power and stability presented by the p-HEMT transistor. These oscillators are designed at 2.45 GHz frequency for which we find application in Bluetooth and Wi-Fi. In this paper, these designs are studied and tested, with their results analyzed below. Further, study proved that the Colpitts oscillator designed gave more output power and stability than the negativeresistance oscillators.
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